DocumentCode
2191021
Title
High efficiency MOS-FET rectifier device
Author
Shimada, Yuuki ; Kato, Kuniharu ; Sakai, Tatsuo
Author_Institution
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
fYear
1983
fDate
6-9 June 1983
Firstpage
129
Lastpage
136
Abstract
Two new Vertical DSA MOS-FETs were designed and tested. These devices both have a 13 milli-ohm RON and has a low transient loss, and a 2,300pF, a 2,i00pF Ciss, respectively. From circuit experiments, about 20% improvement is confirmed in the loss ratio.
Keywords
Capacitance; Electrodes; Logic gates; Rectifiers; Resistance; Schottky diodes; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069849
Filename
7069849
Link To Document