• DocumentCode
    2191064
  • Title

    Investigation of power mosfet fbsoa using a non-destruct tester

  • Author

    Gauen, K. ; Pshaenich, A.

  • Author_Institution
    Motorola Semiconductor Products Sector, Phoenix, Arizona
  • fYear
    1983
  • fDate
    6-9 June 1983
  • Firstpage
    137
  • Lastpage
    143
  • Abstract
    This paper describes a nondestruct tester for measuring and verifying the FBSOA limits of power MOSFETs. Because the tester is nondestructive, an entire curve can be plotted with one transistor. Device trends thus become apparent and clues to failure mechanisms can sometimes be obtained. On a standard log-log plot, the curve usually describes a straight line with a slope slightly steeper than the -1 slope of constant power dissipation. Whether this phenomena is due to power dissipation or second breakdown is investigated.
  • Keywords
    Fixtures; Logic gates; MOSFET; Power supplies; Semiconductor optical amplifiers; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1983 IEEE
  • Conference_Location
    Albuquerque, New Mexico, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1983.7069850
  • Filename
    7069850