DocumentCode
2191064
Title
Investigation of power mosfet fbsoa using a non-destruct tester
Author
Gauen, K. ; Pshaenich, A.
Author_Institution
Motorola Semiconductor Products Sector, Phoenix, Arizona
fYear
1983
fDate
6-9 June 1983
Firstpage
137
Lastpage
143
Abstract
This paper describes a nondestruct tester for measuring and verifying the FBSOA limits of power MOSFETs. Because the tester is nondestructive, an entire curve can be plotted with one transistor. Device trends thus become apparent and clues to failure mechanisms can sometimes be obtained. On a standard log-log plot, the curve usually describes a straight line with a slope slightly steeper than the -1 slope of constant power dissipation. Whether this phenomena is due to power dissipation or second breakdown is investigated.
Keywords
Fixtures; Logic gates; MOSFET; Power supplies; Semiconductor optical amplifiers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069850
Filename
7069850
Link To Document