DocumentCode
2191100
Title
Design considerations for FET-gated power transistors
Author
Chen, Dan ; Chin, Shaoan
Author_Institution
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA
fYear
1983
fDate
6-9 June 1983
Firstpage
144
Lastpage
149
Abstract
This paper deals with a recently proposed FET-Bipolar combinational power transistor con?? figuration. The feasibility of this configuration has been demonstrated using discrete devices. Design considerations are given to hybridize this configuration.
Keywords
Bipolar transistors; Bonding; Field effect transistors; Materials; Power transistors; Surges;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069851
Filename
7069851
Link To Document