Development of an N-type DEMOS on a 0.6-µm platform for 18V analog & digital aplications

Author

Mayzels, Yinon ; Levin, Sharon ; Regev, Shirly ; Khmaisy, Hafez ; Drori, Rami ; Shapira, Shye

Author_Institution

Tower Semicond. Ltd., Migdal Ha´´Emek, Israel

fYear

2008

fDate

3-5 Dec. 2008

Firstpage

775

Lastpage

778

Abstract

Anomalous hot-carrier induced on-resistance (Ron) and drive current degradations were observed in 18 V n-type Drain Extended MOS (DEMOS) devices with various n-type Drain Drift (NDD) implant dosages. Under the same stress conditions, the device with higher NDD dosage while showing a higher substrate current (Isub) results in lower Idsat and ON-resistance (Ron) degradations. Optimal conditions for NDD implant which shift the high electric field peak causing away from the surface were introduced using technology computer aided design (TCAD) simulations. Consequently hot carrier induced degradation was suppressed as was verified by silicon measurements.

Keywords

CAD; MIS devices; electrical resistivity; hot carriers; stress effects; anomalous hot carrier; drive current degradations; n-type drain drift implant dosages; n-type drain extended MOS devices; on-resistance degradations; platform; size 0.6 μm; stress conditions; technology computer aided design simulations; voltage 18 V; CMOS process; Computational modeling; Computer simulation; Degradation; Energy states; Hot carriers; Implants; Medium voltage; Stress; Threshold voltage; Drain-Extended MOS (DEMOS); ON-resistance (Ron); TCAD; hot-carrier (HC); n-type drain-drift (NDD);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2008. IEEEI 2008. IEEE 25th Convention of

Conference_Location

Eilat

Print_ISBN

978-1-4244-2481-8

Electronic_ISBN

978-1-4244-2482-5

Type

conf

DOI

10.1109/EEEI.2008.4736641

Filename

4736641