Title :
Large signal modelling of cryogenically cooled GaAs field effect transistors for low phase noise oscillator design
Author :
Llopis, O. ; Verdier, J. ; Dienot, J.M. ; Andre, P. ; Plana, R. ; Graffeuil, J.
Author_Institution :
CNRS, Univ. Paul Sabatier, Toulouse, France
Abstract :
We present an extensive study of microwave FET nonlinear electrical properties at liquid nitrogen temperature. Pulsed measurement, together with low frequency noise measurements and S-parameters measurements, have been used to extract a large signal model of a previously selected HEMT device. This model is particularly dedicated to microwave low phase noise cryogenic oscillators design.<>
Keywords :
III-V semiconductors; S-parameters; cryogenics; gallium arsenide; high electron mobility transistors; microwave oscillators; semiconductor device models; semiconductor device noise; solid-state microwave circuits; solid-state microwave devices; GaAs; HEMT device; S-parameters measurements; cryogenically cooled FET; large signal modelling; liquid nitrogen temperature; low frequency noise measurements; low phase noise oscillator design; microwave FET nonlinear electrical properties; pulsed measurement; Frequency measurement; Gallium arsenide; Low-frequency noise; Microwave FETs; Microwave devices; Nitrogen; Noise measurement; Pulse measurements; Scattering parameters; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335192
