An improved all-p-type multiguard termination structure for silicon radiation detectors

A junction termination structure for silicon radiation detectors is investigated, featuring all-p-type multiguard and scribe-line implants, with metal field-plates providing complete coverage of the oxide upper surface above non-implanted regions. The sensitive. interface between oxide and n-type substrate is thus electrostatically screened from the external environment, holding the promise for improved long-term stability of the device and excellent insensitivity to ambient conditions. Careful design of the multiguard layout enables high-voltage operation to be achieved. With respect to a previously proposed structure, the adoption of alternate outward and inward field plates between adjacent rings allows a large improvement in the voltage handling capability.