• DocumentCode
    2191392
  • Title

    A new characterization approach to extract HBT´s models for non-linear microwave CAD

  • Author

    Dienot, J.M. ; Llopis, O. ; Andre, P. ; Gayral, M. ; Graffeuil, J.

  • Author_Institution
    CNRS, Univ. Paul Sabatier, Toulouse, France
  • fYear
    1994
  • fDate
    23-27 May 1994
  • Firstpage
    977
  • Abstract
    Pulsed I-V measurements, which provide a valid representation of the thermal state of a non-linear device experiencing a given dissipated DC power, are performed together with others independent DC and AC measurements. It is reported how all these data are used to extract an accurate HBT large signal model. This model is shown to be able to predict the performance of a 1.8 GHz VCO.<>
  • Keywords
    S-parameters; circuit CAD; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; solid-state microwave devices; 1.8 GHz; AC measurements; DC measurements; HBT model extraction; characterization method; large signal model; nonlinear microwave CAD; pulsed I-V measurements; Data mining; Heterojunction bipolar transistors; Performance evaluation; Power measurement; Predictive models; Pulse measurements; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1994., IEEE MTT-S International
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1778-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1994.335193
  • Filename
    335193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2191392