Title :
A new characterization approach to extract HBT´s models for non-linear microwave CAD
Author :
Dienot, J.M. ; Llopis, O. ; Andre, P. ; Gayral, M. ; Graffeuil, J.
Author_Institution :
CNRS, Univ. Paul Sabatier, Toulouse, France
Abstract :
Pulsed I-V measurements, which provide a valid representation of the thermal state of a non-linear device experiencing a given dissipated DC power, are performed together with others independent DC and AC measurements. It is reported how all these data are used to extract an accurate HBT large signal model. This model is shown to be able to predict the performance of a 1.8 GHz VCO.<>
Keywords :
S-parameters; circuit CAD; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; solid-state microwave devices; 1.8 GHz; AC measurements; DC measurements; HBT model extraction; characterization method; large signal model; nonlinear microwave CAD; pulsed I-V measurements; Data mining; Heterojunction bipolar transistors; Performance evaluation; Power measurement; Predictive models; Pulse measurements; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335193
