Title :
A physics-based MESFET empirical model
Author_Institution :
Dept. de Electron. e Telecoms, Aveiro Univ., Portugal
Abstract :
Although physics device models are recognized to provide interesting advantages over empirical expressions normally used in microwave simulation, little has been done by circuit designers, to exploit the concepts and knowledge gathered in that area. The present work is intended to review some simple conclusions drawn from MESFET physics behavior, and to show how they can be used in the development of a promising empirical nonlinear device model.<>
Keywords :
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; MESFET empirical model; microwave simulation; nonlinear device model; physics-based empirical model; Circuit simulation; MESFETs; Microwave circuits; Microwave devices; Physics;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335194
