Calculation of HEMT oscillator phase noise using large signal analysis in time domain

Author

Olbrich, G.R. ; Felgentreff, T. ; Anzill, W. ; Hersina, G. ; Russer, P.

Author_Institution

Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

965

Abstract

A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency f/sup a/ noise source. Results of phase noise measurements are compared with calculated data and agree within /spl plusmn/5 dB.<>

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; microwave integrated circuits; microwave oscillators; nonlinear network analysis; random noise; semiconductor device noise; time-domain analysis; 15 GHz; DC measurements; HEMT oscillator; S-parameter measurements; SHF; cold modelling techniques; coplanar HEMT oscillator; deembedding procedures; hot modelling techniques; large signal analysis; large signal transistor model; low frequency noise source; model parameters; noise measurements; phase noise; time domain analysis; Frequency; HEMTs; Low-frequency noise; Noise measurement; Oscillators; Phase measurement; Phase noise; Scattering parameters; Signal analysis; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335196

Filename

335196