• DocumentCode
    2191597
  • Title

    Dynamic and low frequency noise characterization at cryogenic temperatures of Si-Ge heterojunction-bipolar transistors

  • Author

    Arnaboldi, C. ; Boella, G. ; Pessina, G.

  • Author_Institution
    Dipt. di Fisica, Univ. di Milano Bicocca, Italy
  • Volume
    1
  • fYear
    2002
  • fDate
    10-16 Nov. 2002
  • Firstpage
    312
  • Abstract
    We present the characterization of the static and noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The region of operation considered was the low injection one in view of their possible applications for the readout of an array of cryogenic detectors.
  • Keywords
    heterojunction bipolar transistors; nuclear electronics; semiconductor device noise; 4.2 K; Si-Ge; Si-Ge heterojunction-bipolar transistors; cryogenic temperatures; low frequency noise; noise; Bipolar transistors; Cryogenics; Detectors; Frequency measurement; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Photonic band gap; Semiconductor device noise; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2002 IEEE
  • Print_ISBN
    0-7803-7636-6
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2002.1239323
  • Filename
    1239323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2191597