Title :
A comparison of GaAs transistors as passive mode mixers
Author :
Schindler, M.J. ; Chu, S.L.G. ; Binder, R.B.
Author_Institution :
Res. Div., Raytheon Co., Lexington, MA, USA
Abstract :
A number of GaAs transistors were evaluated as passive mode mixers with a 10 GHz RF and 2 GHz IF. Both single-tone and two-tone performance were measured for an ion implanted MESFET, spike-doped PsMESFET, a power PsHEMT and a npn power HBT. All were shown to have a substantially lower distortion than a comparable diode mixer. One transistor, the spike-doped PsMESFET, has a relative third order intercept point 20 dB higher than that of a diode mixer.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; electric distortion; field effect integrated circuits; gallium arsenide; heterojunction bipolar transistors; mixers (circuits); 10 GHz; GaAs; MMICs; distortion; ion implanted MESFET; npn power HBT; passive mode mixers; power PsHEMT; relative third order intercept point; single-tone performance; spike-doped PsMESFET; two-tone performance; Diodes; Distortion measurement; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Power measurement; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335203
