Trench and via filling profile simulations for copper electroplating process

Author

Kobayashi, Kinya ; Sano, Akihiro ; Akahoshi, Haruo ; Itabashi, Takeyuki ; Haba, Toshio ; Fukada, Shinichi ; Miyazaki, Hiroshi

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

2000

fDate

2000

Firstpage

34

Lastpage

36

Abstract

We have developed a simulation method to calculate filling profile in sub-micron scale trenches and vias using Cu electroplating. The physical properties (diffusivity and surface reaction rate) of additives are directly incorporated in the boundary condition of this method so that the effects of physical properties of the additives on profile of filling can be evaluated. Using this method, we clarified that micro-knobs and overhangs on seed layer are important for creating a void or seam in the Cu film

Keywords

copper; electroplating; integrated circuit interconnections; integrated circuit metallisation; Cu; Cu electroplating process; boundary condition; diffusivity; micro-knobs; overhangs; seed layer; simulation method; sub-micron scale trenches; surface reaction rate; trench filling profile simulations; via filling profile simulations; Additives; Boundary conditions; Copper; Current distribution; Filling; Laboratories; Laplace equations; Predictive models; Semiconductor device modeling; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854273

Filename

854273