Title :
Extracting small-signal model parameters of silicon MOSFET transistors
Author :
Lovelace, D. ; Costa, J. ; Camilleri, N.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
A novel approach to the extraction of small signal model parameters for silicon MOSFETs is described. This technique was developed to extract a high frequency model based only on S-parameter measurements to obtain both the intrinsic and parasitic resistance model parameter values of a small signal model.<>
Keywords :
S-parameters; elemental semiconductors; equivalent circuits; insulated gate field effect transistors; semiconductor device models; silicon; solid-state microwave devices; MOSFET transistors; S-parameter measurements; Si; high frequency model; intrinsic resistance; parasitic resistance; small-signal model parameters; Electrical resistance measurement; Frequency measurement; MOSFET circuits; Scattering parameters; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335220
