The characterization of trimethylsilane based PE-CVD α-SiCO:H low-k films

Author

Wang, Bor Kai ; Loboda, Mark J. ; Cerny, Glenn A. ; Schneider, Ryan F. ; Seifferly, Jeff A. ; Washer, Tom

Author_Institution

Dow Corning Corp., Midland, MI, USA

fYear

2000

fDate

2000

Firstpage

52

Lastpage

54

Abstract

The trimethylsilane (3MS) based low-k α-SiCO:H films can be made using 3MS, He and N₂O in typical PECVD equipment. In this study, the structure, composition, and electrical characteristics of these films were evaluated with different process conditions. RBS and FTIR were evaluated to understand the composition and structure of films. The films have been characterized as-deposited and after annealing at 400°C to see the thermal stability. 3MS low-k α-SiCO:H films showed low bulk film density (1.14-1.34 g/cm³), low-k (2.6<k<3.2), low leakage current density (J<10 ^-10 A/cm² at 1 MV/cm), and relatively high breakdown field (E>4 MV/cm at 1 mA/cm²)

Keywords

Fourier transform spectra; Rutherford backscattering; annealing; hydrogen; infrared spectra; insulating thin films; permittivity; plasma CVD coatings; silicon compounds; thermal stability; 400 C; FTIR; RBS; SiCO:H; composition; electrical characteristics; high breakdown field; low bulk film density; low leakage current density; structure; thermal stability; trimethylsilane based PE-CVD α-SiCO:H low-k films; Annealing; Atomic layer deposition; Atomic measurements; Electric variables; Helium; Optical films; Plasma measurements; Plasma temperature; Semiconductor films; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854279

Filename

854279