Study on adhesion properties of low dielectric constant films by stud pull test and modified edge lift-off test

Author

Song, Jung Gyu ; Ryu, Choon Kun ; Kim, Heon-Do ; Kim, Si-Bum ; Kim, Chung Tae ; Hwang, Jeong Mo

Author_Institution

Hyundai Electron. Ind. Co. Ltd, Kyungki, South Korea

fYear

2000

fDate

2000

Firstpage

55

Lastpage

57

Abstract

Adhesion of low-k films to hardmask or underlayer were studied using stud pull test and modified edge lift off test (m-ELT). The adhesion of SiLK to hardmask was enhanced by depositing thin silicon rich oxide layer under conventional PECVD oxide hard mask. The enhancement of adhesion by the Si-rich oxide layer could be attributed to the increase of dangling bonds on the hardmask surface. Adhesion of SiLK to oxide underlayer was degraded by post-anneal at 430°C and the above and 5-cycle annealing at 400°C. The good correlation between stud pull test and m-ELT was shown in both SiLK and low-k CVD films

Keywords

adhesion; annealing; dangling bonds; insulating thin films; permittivity; semiconductor-insulator boundaries; 400 C; 430 C; Si; Si-rich oxide layer; SiLK; SiO; adhesion properties; dangling bonds; hardmask; low dielectric constant films; low-k films; modified edge lift-off test; stud pull test; underlayer; Adhesives; Annealing; Delay; Dielectric constant; Dielectric materials; Electronic equipment testing; Inorganic materials; Integrated circuit interconnections; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854280

Filename

854280