Noise parameter modeling of HEMTs with resistor temperature noise sources

Author

Felgentreff, T. ; Olbrich, G. ; Russer, P.

Author_Institution

Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

853

Abstract

We present a new model to describe the millimeter wave noise performance of MESFETs and HEMTs. The model is used to extrapolate the noise parameters in frequency range and to describe the noise behaviour over a wide range of bias points. The model is based on three uncorrelated noise sources located at the intrinsic transistor, which are assumed to show white spectral behaviour. The parameters of the model are determined from noise parameter measurements. The noise parameter extraction technique is straightforward and based on circuit simulation programs. The model is applied to several pseudomorphic and conventional HEMT structures and results are compared with data obtained from other models.<>

Keywords

Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; thermal noise; white noise; HEMTs; MESFETs; MM-wave FETs; circuit simulation programs; millimeter wave noise performance; noise parameter extraction technique; noise parameter modeling; pseudomorphic structures; resistor temperature noise sources; white spectral behaviour; Circuit noise; Frequency; HEMTs; MESFETs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise measurement; Resistors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335223

Filename

335223