DocumentCode :
2192171
Title :
Irregular growth of PECVD-Ti silicide film on doped Si substrates
Author :
Tai, Kaori ; Harada, Yusuke ; Matsumoto, Muneyuki ; Oki, Hisanori
Author_Institution :
LSI Production Division, Oki Electric Industry Co., Ltd., Tokyo, Japan
fYear :
2000
fDate :
2000
Firstpage :
64
Lastpage :
66
Keywords :
Chemical industry; Large scale integration; Production; Scanning electron microscopy; Semiconductor films; Silicides; Sputtering; Substrates; Surface morphology; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Print_ISBN :
0-7803-6327-2
Type :
conf
DOI :
10.1109/IITC.2000.854283
Filename :
854283
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2192171
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