Title :
Experimental investigation of the temperature dependence of PHEMT noise parameters
Author :
Lardizabal, S. ; Dunleavy, L. ; Wing Yau ; Bar, S.
Author_Institution :
Univ. of South Florida, Tampa, FL, USA
Abstract :
A general temperature dependent noise equivalent circuit parameter modeling procedure for MESFETs and PHEMTs is described. The noise source variations are fitted to linear functions of temperature over the 25 to 100/spl deg/C range. The originality of the contribution lies in the combined treatment of the temperature dependence of both the small signal model and the internal noise sources.<>
Keywords :
S-parameters; Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; 25 to 100 C; HEMT noise parameters; MESFETs; internal noise sources; linear functions; noise equivalent circuit parameter modeling; noise source variations; pseudomorphic HEMT; small signal model; temperature dependence; Circuit noise; Equivalent circuits; MESFETs; PHEMTs; Temperature dependence; Temperature distribution;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335225
