Title :
Suppression of poly emitter bipolar hot carrier effects in an advanced BiCMOS technology
Author_Institution :
Nat. Semicond. Corp., Puyallup, WA, USA
Abstract :
Bipolar hot carrier effects in phosphorous and arsenic poly emitter transistors are studied. The role of avalanche and tunnel current components in transistor current gain degradation is identified. The study indicates that transistors with tunneling emitter-phase junctions are less susceptible to current gain degradation. By optimization of emitter-base junction dopant profiles, the reliability of high-performance bipolar transistors can be significantly enhanced
Keywords :
BIMOS integrated circuits; bipolar transistors; doping profiles; elemental semiconductors; hot carriers; integrated circuit technology; semiconductor device models; semiconductor doping; silicon; advanced BiCMOS technology; avalanche current components; emitter-base junction dopant profiles; high-performance bipolar transistors; hot carrier effects suppression; optimization; poly emitter bipolar hot carrier effects; polycrystalline Si:P, As emitters; polysilicon emitters; reliability; transistor current gain degradation; tunnel current components; tunneling emitter-phase junctions; Automatic control; BiCMOS integrated circuits; Bipolar transistors; Boron; Degradation; Hot carrier effects; Hot carriers; Implants; Stress; Tunneling;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69478
