Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Author

Wu, Z.C. ; Shiung, Z.W. ; Wang, C.C. ; Fang, K.L. ; Wu, R.G. ; Liu, Y.L. ; Tsui, B.Y. ; Chen, M.C. ; Chang, W. ; Chou, P.F. ; Jang, S.M. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

82

Lastpage

84

Abstract

Electrical reliability issues of two organic aromatic low-K materials (K 2.6~2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits

Keywords

copper; dielectric thin films; metallisation; polymer films; reliability; thermal stability; C-V characteristics; Cu; bias-temperature stress; copper metallization; dielectric barrier; electrical reliability; organic aromatic low-k polymer; process integration; stress induced dielectric polarization charge; thermal stability; Annealing; Capacitance-voltage characteristics; Capacitors; Circuit stability; Dielectric materials; Metallization; Polymer films; Semiconductor materials; Thermal stability; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854289

Filename

854289