Title :
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
Author :
Wu, Z.C. ; Shiung, Z.W. ; Wang, C.C. ; Fang, K.L. ; Wu, R.G. ; Liu, Y.L. ; Tsui, B.Y. ; Chen, M.C. ; Chang, W. ; Chou, P.F. ; Jang, S.M. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Electrical reliability issues of two organic aromatic low-K materials (K 2.6~2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits
Keywords :
copper; dielectric thin films; metallisation; polymer films; reliability; thermal stability; C-V characteristics; Cu; bias-temperature stress; copper metallization; dielectric barrier; electrical reliability; organic aromatic low-k polymer; process integration; stress induced dielectric polarization charge; thermal stability; Annealing; Capacitance-voltage characteristics; Capacitors; Circuit stability; Dielectric materials; Metallization; Polymer films; Semiconductor materials; Thermal stability; Thermal stresses;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854289
