Title :
A 10-watt X-band grid oscillator
Author :
Hacker, J.B. ; De Lisio, M.P. ; Moonil Kim ; Cheh-Ming Liu ; Shi-Jie Li ; Wedge, S.W. ; Rutledge, D.B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4 V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid.<>
Keywords :
Schottky gate field effect transistors; microwave oscillators; power transistors; semiconductor device noise; solid-state microwave devices; 10.3 W; 100-transistor MESFET grid oscillator; 103 mW; 23 percent; 6 A; 660 W; 7.4 V; 9.8 GHz; SSB noise level; SSB noise-to-carrier ratio; X-band grid oscillator; directivity; effective radiated power; grid drain-source bias voltage; output power; overall dc-to-rf efficiency; radiation angle; total drain current; total radiated power; Amplitude modulation; MESFETs; Mesh generation; Noise level; Noise measurement; Oscillators; Power generation; Signal to noise ratio; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335230
