DocumentCode
2192308
Title
Temporal response of CZT detectors under intense irradiation
Author
Du, Yanfeng ; LeBlanc, James ; Possin, George E. ; Yanoff, Brian D. ; Bogdanovich, Snezana
Author_Institution
GE Global Res. Center, Niskayuna, NY, USA
Volume
1
fYear
2002
fDate
10-16 Nov. 2002
Firstpage
480
Abstract
The temporal response of CZT detectors is measured under different X-ray flux, spectra, and detector bias conditions. A comprehensive model has been developed to investigate the detector response under these conditions. The calculations have been compared with our measured results. Reasonable qualitative agreement is shown between the model and measurement results. This model provides a powerful tool to understand the detector temporal response, photocurrent dependence on the irradiation intensity, bias voltage, and defect characteristics. Understanding the detector response from a microscopic level can provide a guide to improve material properties and detector device design.
Keywords
X-ray detection; cadmium compounds; nuclear electronics; photoconductivity; position sensitive particle detectors; readout electronics; semiconductor counters; CZT detectors; CdZnTe; X-ray flux; bias voltage; defect characteristics; detector bias conditions; detector response; intense irradiation; irradiation intensity; photocurrent dependence; temporal response; Anodes; Biomedical imaging; Cathodes; Leak detection; Photoconductivity; Radiation detectors; Steady-state; Voltage; X-ray detection; X-ray detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2002 IEEE
Print_ISBN
0-7803-7636-6
Type
conf
DOI
10.1109/NSSMIC.2002.1239359
Filename
1239359
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