• DocumentCode
    2192308
  • Title

    Temporal response of CZT detectors under intense irradiation

  • Author

    Du, Yanfeng ; LeBlanc, James ; Possin, George E. ; Yanoff, Brian D. ; Bogdanovich, Snezana

  • Author_Institution
    GE Global Res. Center, Niskayuna, NY, USA
  • Volume
    1
  • fYear
    2002
  • fDate
    10-16 Nov. 2002
  • Firstpage
    480
  • Abstract
    The temporal response of CZT detectors is measured under different X-ray flux, spectra, and detector bias conditions. A comprehensive model has been developed to investigate the detector response under these conditions. The calculations have been compared with our measured results. Reasonable qualitative agreement is shown between the model and measurement results. This model provides a powerful tool to understand the detector temporal response, photocurrent dependence on the irradiation intensity, bias voltage, and defect characteristics. Understanding the detector response from a microscopic level can provide a guide to improve material properties and detector device design.
  • Keywords
    X-ray detection; cadmium compounds; nuclear electronics; photoconductivity; position sensitive particle detectors; readout electronics; semiconductor counters; CZT detectors; CdZnTe; X-ray flux; bias voltage; defect characteristics; detector bias conditions; detector response; intense irradiation; irradiation intensity; photocurrent dependence; temporal response; Anodes; Biomedical imaging; Cathodes; Leak detection; Photoconductivity; Radiation detectors; Steady-state; Voltage; X-ray detection; X-ray detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2002 IEEE
  • Print_ISBN
    0-7803-7636-6
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2002.1239359
  • Filename
    1239359