GaAs rectification-an enabling technology for high frequency operation of power MOS-gated transistors

Author

Anderson, Samuel

Author_Institution

Optoelectron., Signal Products Div., Motorola Inc., Phoenix, AZ, USA

fYear

1996

fDate

20-23 May 1996

Firstpage

33

Lastpage

39

Abstract

This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper

Keywords

III-V semiconductors; field effect transistor switches; gallium arsenide; power MOSFET; power factor correction; rectification; solid-state rectifiers; 600 V; GaAs; III-V semiconductors; enabling technology; high frequency operation; output rectification; performance improvement; power MOS-gated transistors; power factor correction; switching performance; synchronous rectification; Buildings; Circuits; Frequency; Gallium arsenide; Power factor correction; Power supplies; Rectifiers; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509445

Filename

509445