Bonded SOI technologies for high voltage applications

Author

Abe, Takao ; Katayama, Masatake

Author_Institution

Shin-Etsu Hondotai, Gunma, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

41

Lastpage

49

Abstract

A survey is presented of bonded SOI (BSOI) applications utilizing silicon layers of thickness from 0.1 μm to 60 μm. Description of the fabrication process and properties of standard BSOI is given. For high voltage applications,the various bonded structures and material issues are described and compared to SIMOX (separation by implanted oxygen). New thinning technologies for ultra-thin SOI (<0.1 μm) including recently developed method for separation at an implanted plane are briefly discussed

Keywords

MOS analogue integrated circuits; electric breakdown; large scale integration; power integrated circuits; silicon-on-insulator; wafer bonding; 0.1 to 60 micron; BSOI; Si; bonded SOI technologies; bonded structures; breakdown voltage; fabrication process; high voltage applications; implanted plane separation; material issues; power ICs; thinning technologies; Conductivity; Costs; Electric breakdown; Fabrication; Glass; Power integrated circuits; Production; Silicon; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509446

Filename

509446