Title :
Power PHEMT module delivers 4 watts, 38% P.A.E. over the 18.0 to 21.2 GHz band
Author :
Kraemer, B. ; Basset, R. ; Baughman, C. ; Chye, P. ; Day, D. ; Wei, J.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
Abstract :
This paper describes performance of power PHEMT technology at K-band. Power PHEMT modules are shown to deliver an average output power of 4.7 watts and an average power-added efficiency (P.A.E.) of 38.5% over the 18.0 to 21.2 GHz frequency range for a 20 module sample size. Data are shown in statistical format. Peak module performance of 5.4 watts output power and 41.4% P.A.E. within the 18.0 to 21.2 GHz band is also presented. The results demonstrate the capability and advantages of using PHEMT technology over MESFET technology and TWTs.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 18.0 to 21.2 GHz; 38.5 to 41.4 percent; 4.7 to 5.4 W; K-band; average output power; average power-added efficiency; output power; peak module performance; power PHEMT module; Frequency; K-band; MESFETs; PHEMTs; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335235
