Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

Author

Donaton, R.A. ; Iacopi, F. ; Baklanov, M.R. ; Shamiryan, D. ; Coenegrachts, B. ; Struyf, H. ; Lepage, M. ; Meuris, M. ; Van Hove, M. ; Gray, W.D. ; Meynen, H. ; De Roest, D. ; Vanhaelemeersch, S. ; Maex, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2000

fDate

2000

Firstpage

93

Lastpage

95

Abstract

Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in a change of porosity. A low-K dielectric film with a pore size around 3.5 nm is successfully integrated in 0.2 μm single damascene structures

Keywords

dielectric thin films; integrated circuit interconnections; plasma materials processing; porosity; refractive index; silicon compounds; thermal stability; 0.2 mum; SiH bond density; moisture absorption; plasma exposure; pore size; porosity; refractive index; silsesquioxane; single damascene structures; thermal stability; ultra-low k dielectric films; Absorption; Bonding; Dielectrics; Moisture; Optical films; Plasma density; Plasma materials processing; Plasma properties; Refractive index; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854292

Filename

854292