Title :
A 30 V line driver in submicron BiCMOS technology
Author :
Aliahmad, Mehran ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
This paper presents a 30 V line driver for telecommunication applications. The circuit (0.3 mm2 in area) is implemented in a 5 V 0.8 μm BiCMOS process using 30 V extended-drain MOS devices fully compatible with low voltage technology. The design uses a Quasi-Current Mirror output stage and is capable of delivering up to 30 mA to the load with an idle current of less than 1 mA. The line driver exhibits a bandwidth of 2 MHz with a phase margin of 45
Keywords :
BiCMOS analogue integrated circuits; VLSI; driver circuits; integrated circuit design; integrated circuit reliability; telecommunication equipment; 0.8 micron; 2 MHz; 30 V; VLSI; extended-drain MOS devices; idle current; line driver; phase margin; quasi-current mirror output stage; submicron BiCMOS technology; telecommunication applications; Application software; Bandwidth; BiCMOS integrated circuits; Capacitors; Driver circuits; Energy consumption; MOS devices; MOSFETs; Mirrors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509449
