Title :
Application of high pressure process into Cu/low-k technologies
Author :
Suzuki, Kohei ; Fujikawa, Takao ; Kawakami, Nobuyulu
Author_Institution :
Kobe Steel Ltd., Hyogo, Japan
Abstract :
High-pressure processing in the range of 16-120 MPa has been introduced to Cu/low-k interconnect technologies as a new generation. Hot isostatic pressing (HIP) was applied to the formation of Cu plugs with a high aspect ratio. A new finding related to a combination with electroplated Cu is also discussed. A supercritical CO2 fluid was applied to a formation of low-k porous silica films as a means of capillary-force-free drying. A low dielectric constant, as low as 1.1, was achieved by using this technique. It is demonstrated that high-pressure processing has several attractive advantages for semiconductor processing
Keywords :
copper; high-pressure techniques; hot pressing; integrated circuit interconnections; permittivity; porous materials; 16 to 120 MPa; Cu; Cu plugs; Cu/low-k interconnect technologies; capillary-force-free drying; electroplated Cu; high-pressure processing; hot isostatic pressing; porous silica films; semiconductor processing; supercritical CO2 fluid; Aluminum; Argon; Atherosclerosis; Copper; Hip; Plugs; Pressing; Semiconductor device manufacture; Silicon compounds; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854295
