DocumentCode
2192632
Title
Investigation of the roles of the additive components for second generation copper electroplating chemistries used for advanced interconnect metalization
Author
Mikkola, Robert D. ; Chen, Linlin
Author_Institution
Sematech Inc., Austin, TX, USA
fYear
2000
fDate
2000
Firstpage
117
Lastpage
119
Abstract
This paper discusses the effects of the emerging second generation copper electrochemical deposition (ECD) bath additives on the fill mechanism for advanced interconnect trenches. The role of the accelerator (organic disulfides) and suppressor (polymers) for a two component additive package was evaluated. In addition the effects of the polymer-Cl interaction on the fill mechanism as a function of chloride ion concentration was explored. SEM cross sections of partially filled electroplated copper trenches show a two stage fill mechanism consisting of (1) conformal fill followed by (2) bottom-up fill. It was determined that the polymer-Cl complex plays a critical role during the initial stages of fill for sub one-micron trenches
Keywords
copper; electroplating; metallisation; scanning electron microscopy; Cu; SEM; accelerator; additive component; chloride ion concentration; copper electroplating; electrochemical deposition; interconnect metallization; organic disulfide; polymer; polymer-Cl complex; suppressor; trench filling; Accelerated aging; Additives; Chemistry; Copper; Current density; Ion accelerators; Packaging; Polymer films; Process control; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854299
Filename
854299
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