• DocumentCode
    2192632
  • Title

    Investigation of the roles of the additive components for second generation copper electroplating chemistries used for advanced interconnect metalization

  • Author

    Mikkola, Robert D. ; Chen, Linlin

  • Author_Institution
    Sematech Inc., Austin, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    117
  • Lastpage
    119
  • Abstract
    This paper discusses the effects of the emerging second generation copper electrochemical deposition (ECD) bath additives on the fill mechanism for advanced interconnect trenches. The role of the accelerator (organic disulfides) and suppressor (polymers) for a two component additive package was evaluated. In addition the effects of the polymer-Cl interaction on the fill mechanism as a function of chloride ion concentration was explored. SEM cross sections of partially filled electroplated copper trenches show a two stage fill mechanism consisting of (1) conformal fill followed by (2) bottom-up fill. It was determined that the polymer-Cl complex plays a critical role during the initial stages of fill for sub one-micron trenches
  • Keywords
    copper; electroplating; metallisation; scanning electron microscopy; Cu; SEM; accelerator; additive component; chloride ion concentration; copper electroplating; electrochemical deposition; interconnect metallization; organic disulfide; polymer; polymer-Cl complex; suppressor; trench filling; Accelerated aging; Additives; Chemistry; Copper; Current density; Ion accelerators; Packaging; Polymer films; Process control; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854299
  • Filename
    854299