The dual-gate MOS controlled thyristor with current saturation capability

Author

Mehrotra, Manoj ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1996

fDate

20-23 May 1996

Firstpage

133

Lastpage

136

Abstract

A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 μs. The device transits from the thyristor mode to the IGBT mode in 6 μs. No lifetime killing technique was used to control the turn-off time for these devices

Keywords

MOS-controlled thyristors; 700 V; FBSOA; IGBT mode; MCT mode; blocking capability; current saturation; dual-gate MOS controlled thyristor; on-state voltage drop; power device; turn-off time; Analytical models; Anodes; Cathodes; Doping; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509465

Filename

509465