Title :
The dual-gate MOS controlled thyristor with current saturation capability
Author :
Mehrotra, Manoj ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 μs. The device transits from the thyristor mode to the IGBT mode in 6 μs. No lifetime killing technique was used to control the turn-off time for these devices
Keywords :
MOS-controlled thyristors; 700 V; FBSOA; IGBT mode; MCT mode; blocking capability; current saturation; dual-gate MOS controlled thyristor; on-state voltage drop; power device; turn-off time; Analytical models; Anodes; Cathodes; Doping; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509465
