Title :
Future trends in local lifetime control [power semiconductor devices]
Author :
Vobecky, J. ; Hazdra, P.
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
Abstract :
Energy and dose mixing concept, applied in ion irradiation technology for local lifetime tailoring, is shown to be capable of creating a customer-specific lifetime profile. The electrical parameters of power diode, subjected to the new ion irradiation concept, are compared with those ones resulting from the energy dispersed alpha particle irradiation
Keywords :
alpha-particle effects; carrier lifetime; ion implantation; minority carriers; power semiconductor devices; power semiconductor diodes; alpha particle irradiation; customer-specific lifetime profile; electrical parameters; energy/dose mixing concept; ion irradiation technology; local lifetime control; power diode irradiation; power semiconductor devices; Alpha particles; Diodes; Electrons; Gold; Helium; Platinum; Protons; Shape; Silicon; Spontaneous emission;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509471
