Title :
Electron spin resonance (ESR) characterization of defects in low-k dielectrics-temperature effect
Author :
Turek, P. ; Bernard, M. ; Lardon, N. ; Maisonobe, JC ; Passemard, G.
Author_Institution :
Inst. Charles Sadron, Univ. Louis Pasteur, Strasbourg, France
Abstract :
The electron spin resonance (ESR) technique has been used for the detection and the study of paramagnetic defects in various low-k dielectrics. Whereas the studied organic polymers (SiLK(R), FLARE(R)) exhibit an ESR response as previously reported, no defects could be detected in the silicon based organo-mineral materials (MSQ, Black Diamond(R), Xerogel). A peculiar behavior is evidenced for the observed defects: (i) reversible variation of the defect concentration at air exposure/vacuum cycling, (ii) curing effect during annealing cycles
Keywords :
annealing; dielectric materials; paramagnetic resonance; polymers; Black Diamond; ESR; FLARE; MSQ; Si-based organo-mineral materials; SiLK; Xerogel; air exposure; annealing; curing; defect concentration; low-k dielectrics; paramagnetic defects; polymers; vacuum cycling; Annealing; Curing; Dielectrics; Failure analysis; Integrated circuit technology; Organic materials; Paramagnetic materials; Paramagnetic resonance; Polymers; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854316
