Electron spin resonance (ESR) characterization of defects in low-k dielectrics-temperature effect

Author

Turek, P. ; Bernard, M. ; Lardon, N. ; Maisonobe, JC ; Passemard, G.

Author_Institution

Inst. Charles Sadron, Univ. Louis Pasteur, Strasbourg, France

fYear

2000

fDate

2000

Firstpage

173

Lastpage

175

Abstract

The electron spin resonance (ESR) technique has been used for the detection and the study of paramagnetic defects in various low-k dielectrics. Whereas the studied organic polymers (SiLK(R), FLARE(R)) exhibit an ESR response as previously reported, no defects could be detected in the silicon based organo-mineral materials (MSQ, Black Diamond(R), Xerogel). A peculiar behavior is evidenced for the observed defects: (i) reversible variation of the defect concentration at air exposure/vacuum cycling, (ii) curing effect during annealing cycles

Keywords

annealing; dielectric materials; paramagnetic resonance; polymers; Black Diamond; ESR; FLARE; MSQ; Si-based organo-mineral materials; SiLK; Xerogel; air exposure; annealing; curing; defect concentration; low-k dielectrics; paramagnetic defects; polymers; vacuum cycling; Annealing; Curing; Dielectrics; Failure analysis; Integrated circuit technology; Organic materials; Paramagnetic materials; Paramagnetic resonance; Polymers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854316

Filename

854316