Film properties and surface profile after gap fill of electrochemically deposited Cu films by DC and pulse reverse processes

Author

Hsieh, C.H. ; Chou, S.W. ; Shue, S.L. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Res. & Dev., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2000

fDate

2000

Firstpage

182

Lastpage

184

Abstract

The self-annealing and the surface reflectivity of Cu films prepared by electrochemical deposition (ECD) are obtained for the DC and pulse reverse processes. They show different behaviors for these two processes, and their behaviors can be well correlated with the grain size of the films. The mechanism of gap fill is discussed according to the surface profile after gap fill for these two processes. It is proposed that the gap filling is mainly controlled by the additive diffusion for the DC process, while it is mainly controlled by the additive adsorption for the pulse reverse process

Keywords

adsorption; annealing; copper; diffusion; electrodeposition; grain size; integrated circuit interconnections; metallic thin films; reflectivity; Cu; DC process; additive adsorption; additive diffusion; electrochemically deposited Cu films; gap fill; grain size; pulse reverse process; self-annealing; surface profile; surface reflectivity; Copper; Electrical resistance measurement; Grain size; Manufacturing processes; Optical films; Reflectivity; Research and development; Semiconductor films; Surface resistance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854319

Filename

854319