Title :
An intelligent vertical trench DMOS on SIMOX-substrate
Author :
Vogt, F. ; Vogt, H. ; Brucker, J. ; Zimmermann, C. ; Richter, F.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
This paper describes first results of a monolithically integrated smart power device which uses a vertical Trench-DMOS as a power switch and a signal and control circuit fabricated in a SOI-CMOS technology (SOI: silicon on insulator). The vertical dielectric isolation between the Trench-DMOS and the control circuit is formed by the SIMOX-Process (SIMOX: separation by implanted oxygen) and the lateral isolation is realized by the LOGOS technology. The self-protection of the entire device is achieved by measuring the temperature and the load current of the power transistor. The protection is provided by analog and digital CMOS circuits with a supply voltage of 15 V. This device can be used, for example, as an “intelligent” switch in a dimmer circuit for automotive application
Keywords :
CMOS integrated circuits; SIMOX; integrated circuit technology; isolation technology; mixed analogue-digital integrated circuits; power integrated circuits; protection; 15 V; LOGOS technology; SIMOX substrate; SOI CMOS technology; Si; automotive application; dimmer circuit; intelligent switch; intelligent vertical trench DMOS; lateral isolation; monolithically integrated smart power device; power switch; self-protection; vertical dielectric isolation; CMOS technology; Current measurement; Dielectric measurements; Integrated circuit technology; Isolation technology; Power measurement; Power transistors; Silicon on insulator technology; Switches; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509475
