DocumentCode
2193163
Title
Microstructure evolution of electroplated Cu during room temperature transient
Author
Gribelyuk, M.A. ; Malhotra, S.G. ; Locke, P.S. ; DeHaven, P. ; Fluegel, J. ; Parks, C. ; Simon, A.H. ; Murphy, R.
Author_Institution
IBM Microelectron. Div., Hopewell Junction, NY, USA
fYear
2000
fDate
2000
Firstpage
188
Lastpage
190
Abstract
Previously the Cu resistance transient time was found to be dependent on the electroplating current. It was shown that longer transient times were correlated with a greater incorporation of plating impurities for the bath chemistry used in this study. The present work shows that the grain growth that occurs during the resistance transient is initiated by the formation of abnormally large grains, where the transformed structure reveals strong Σ3 type twinning. The increase in the fraction of twin grain boundaries with transient time is quantified, and a comparison of the time dependencies of resistivity and the grain size shows that the Mayadas-Shatzkes model can qualitatively describe grain boundary resistivity. X-ray analysis revealed that the structure is strongly {111} textured and the contribution of {200} texture increases during transformation. Atomic Force Microscopy (AFM) and imaging with the secondary electron in-lens detector showed that surface morphology of Cu structures varies across the film and is dependent on the plating current
Keywords
X-ray diffraction; atomic force microscopy; copper; crystal microstructure; electroplated coatings; grain growth; integrated circuit interconnections; integrated circuit metallisation; metallic thin films; twin boundaries; Atomic Force Microscopy; Cu; Mayadas-Shatzkes model; X-ray analysis; electroplated Cu; electroplating current; grain boundary resistivity; grain growth; microstructure evolution; room temperature transient; strong Σ3 type twinning; Atomic force microscopy; Chemistry; Conductivity; Electron microscopy; Grain boundaries; Grain size; Image texture analysis; Impurities; Microstructure; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854321
Filename
854321
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