Title :
The evaluation of the diffusion barrier performance of reactively sputtered TaNx layers for copper metallization
Author :
Lin, J.C. ; Liu, C.S. ; Shue, S.L. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Res. & Dev., Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
Ta-based Cu diffusion barrier properties were widely studied. This work demonstrates that grain boundary diffusivity of Cu diffusion in various TaNx (x=0~0.62) thin films can be extracted from the copper concentration profile, based on the Whipple analysis of grain boundary diffusion, after annealing the samples at fixed temperatures between 200 and 500°C. We used the grain boundary diffusivity to predict the penetration depth (2√Dt) of Cu in Ta and TaNx films at fixed temperatures 250 and 400°C. Cu/TaNx(45 A)/N+P junction diode leakage, SIMS and XSEM analysis results indicated that the Whipple model correlates well with experimental results
Keywords :
copper; grain boundary diffusion; integrated circuit interconnections; integrated circuit metallisation; metallic thin films; sputtered coatings; surface diffusion; tantalum compounds; 250 to 500 C; 400 C; Cu; Cu metallization; SIMS; TaN; Whipple analysis; XSEM; diffusion barrier performance; grain boundary diffusivity; reactively sputtered TaNx layers; Annealing; Copper; Grain boundaries; Grain size; Metallization; Nitrogen; Predictive models; Temperature distribution; Temperature measurement; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854322
