Title :
High-energy Al implantation techniques for power semiconductor devices
Author :
Choi, Jai Ho ; Saito, Katsuaki ; Yokota, Takeshi ; Watanabe, Atsuo
Author_Institution :
Res. Lab., Hitachi Ltd., Japan
Abstract :
A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1×1015 atoms/cm2, we obtained a p-region profile without using a film to prevent out-diffusion
Keywords :
aluminium; doping profiles; elemental semiconductors; ion implantation; power semiconductor devices; semiconductor doping; silicon; 0.5 MeV; Si:Al; fabrication; high-energy Al implantation; high-power devices; p-region profile; power semiconductor devices; Annealing; Artificial intelligence; Conductivity; Energy measurement; Heat treatment; Ion implantation; Laboratories; Power semiconductor devices; Semiconductor films; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509479
