• DocumentCode
    2193231
  • Title

    High-energy Al implantation techniques for power semiconductor devices

  • Author

    Choi, Jai Ho ; Saito, Katsuaki ; Yokota, Takeshi ; Watanabe, Atsuo

  • Author_Institution
    Res. Lab., Hitachi Ltd., Japan
  • fYear
    1996
  • fDate
    20-23 May 1996
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1×1015 atoms/cm2, we obtained a p-region profile without using a film to prevent out-diffusion
  • Keywords
    aluminium; doping profiles; elemental semiconductors; ion implantation; power semiconductor devices; semiconductor doping; silicon; 0.5 MeV; Si:Al; fabrication; high-energy Al implantation; high-power devices; p-region profile; power semiconductor devices; Annealing; Artificial intelligence; Conductivity; Energy measurement; Heat treatment; Ion implantation; Laboratories; Power semiconductor devices; Semiconductor films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
  • Conference_Location
    Maui, HI
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3106-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1996.509479
  • Filename
    509479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193231