Title :
A new SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation
Author :
Ke Lu ; Perry, P. ; Brazil, T.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland
Abstract :
Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.<>
Keywords :
S-parameters; SPICE; circuit analysis computing; heterojunction bipolar transistors; power transistors; semiconductor device models; solid-state microwave devices; AC modes; DC modes; SPICE; circuit simulation; heterojunction bipolar transistor; large-signal model; microwave power applications; multi-bias point S-parameter; parameter extraction; power sweep; self-heating; small-signal model; Heterojunction bipolar transistors; Microwave devices; Parameter extraction; Power measurement; Scattering parameters; Virtual manufacturing;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335272
