Title :
Simplified nonlinear model for the intermodulation analysis of MESFET mixers
Author :
Sotli Peng ; McCleer, P.J. ; Haddad, G.I.
Author_Institution :
Center for High Frequency Microelectronics, Michigan Univ., Ann Arbor, MI, USA
Abstract :
A simplified nonlinear model is proposed for intermodulation (IM) analysis of MESFET gate mixers. The accuracy of the model has been verified experimentally using two different MESFET mixers at X-band. Both tests show excellent agreement between measurement and simulated data for second- and third-order IM performance. The simplified model is based on modeling the derivative of the device transconductance by the sum of a Gaussian function and a linear function of the gate voltage. Drain bias dependence is ignored. The advantage of this model is that the fitting parameters can be easily determined from a nonlinear characterization of the device at low frequencies.<>
Keywords :
Schottky gate field effect transistors; intermodulation; mixers (circuits); semiconductor device models; solid-state microwave devices; Gaussian function; MESFET mixers; X-band; device transconductance; fitting parameters; intermodulation analysis; linear function; nonlinear model; second-order performance; simulation; third-order performance; Frequency; MESFETs; Testing; Transconductance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335273
