Title :
Light triggered 8 kV thyristors with a new type of integrated breakover diode
Author :
Schulze, H.-J. ; Ruff, M. ; Baur, B. ; Pfirsch, F. ; Kabza, H. ; Kellner, U.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
Light triggered 8 kV thyristors with a new type of integrated breakover diode were fabricated. This breakover diode is realized by a well-defined curvature of the junction between the p-base and the n-base. For this purpose, a “masked” Al diffusion is used. Five amplifying gate stages guarantee a safe turn-on behavior also in the case of overvoltage triggering. Additionally, a novel resistor structure, which is also controlled by the masked Al diffusion, was integrated between the amplifying gate stages
Keywords :
overvoltage; photothyristors; power semiconductor switches; 8 kV; amplifying gate stages; integrated breakover diode; light triggered thyristors; overvoltage triggering; resistor structure; turn-on behavior; Artificial intelligence; Board of Directors; Charge carrier lifetime; Protection; Resistors; Semiconductor diodes; Surface cleaning; Thyristors; Valves; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509480
