Title :
Validation of a nonlinear HEMT model by power spectrum characteristics
Author :
Angelov, I. ; Zirath, H. ; Rorsman, N.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The experimental bias dependence of the power output spectrum from various types of HEMT at large signal excitation was studied and compared with predicted values obtained from a newly proposed HEMT model. Good agreement between simulated and measured power spectrum up to at least the fourth harmonic was demonstrated for HEMT devices from different manufacturers. An extension of the existing model is also proposed, which models the V/sub ds/ dependence of the transconductance peak in the region where the drain current is unsaturated and at negative drain voltage.<>
Keywords :
high electron mobility transistors; semiconductor device models; fourth harmonic; large signal excitation; nonlinear HEMT model; power output spectrum; simulation; transconductance; HEMTs; Power measurement; Power system harmonics; Predictive models; Transconductance; Virtual manufacturing; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335274
