Title :
Design and fabrication of new high voltage current limiting devices for serial protection applications
Author :
Sanchez, J.L. ; Leturcq, Ph ; Austin, P. ; Berriane, R. ; Breil, M. ; Anceau, C. ; Ayela, C.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
This paper describes the design and fabrication of new two-terminal semiconductor devices, based on the concept of “functional integration”, acting as current limiter for high voltage applications (400 V to 1,000 V). In the first section, the optimization of structures and fabrication processes are considered using 2D simulation tools SUPREM IV and PISCES. In the second section, the first experimental results of these devices are presented
Keywords :
current limiters; overcurrent protection; power semiconductor devices; protection; 2D simulation tools; 400 to 1000 V; HV current limiting devices; PISCES; SUPREM IV; fabrication; serial protection applications; two-terminal semiconductor device; Current limiters; Electric resistance; Electrodes; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Protection; Semiconductor devices; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509481
