DocumentCode :
2193276
Title :
The effect of residual tensile stress on electromigration lifetime of metal lines passivated by various oxides
Author :
Kim, Young-Pil ; Kwon, Dong-Chul ; Choi, Han-Mei ; Park, Young-Wook ; Lee, Sang-In
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyonggi-Do, South Korea
fYear :
2000
fDate :
2000
Firstpage :
205
Lastpage :
207
Abstract :
Residual stress of metal interconnects passivated by four different oxides was precisely measured by X-ray diffraction method, and the effect of this stress on electromigration (EM) lifetime of the Al-Cu lines was investigated. The EM lifetime was not a monotonous function of the residual stress; instead, it increased with the stress at low stress region, but decreased at the higher stress region. The stress of 200-250 MPa, which is the mid-value between compressive and tensile yield strength of the Al-Cu lines, provided the maximum EM lifetime. This result gives an experimental support to a theoretical calculation on the stress evolution due to EM and a guideline to maximize the EM lifetime for applications
Keywords :
X-ray diffraction; aluminum alloys; compressive strength; copper alloys; electromigration; integrated circuit interconnections; integrated circuit metallization; internal stresses; yield strength; Al-Cu; Al-Cu lines; X-ray diffraction; compressive yield strength; electromigration lifetime; metal lines; passivation; residual tensile stress; tensile yield strength; Compressive stress; Electromigration; Human factors; Passivation; Plasma density; Residual stresses; Stress measurement; Tensile stress; Thermal stresses; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
Type :
conf
DOI :
10.1109/IITC.2000.854326
Filename :
854326
Link To Document :
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