DocumentCode :
2193296
Title :
Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate
Author :
Huang, J.S. ; Oates, A.S.
Author_Institution :
Lucent Technol. Bell Labs., Orlando, FL, USA
fYear :
2000
fDate :
2000
Firstpage :
208
Lastpage :
210
Abstract :
We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (σ) approach infinity as j→jc, and we show that this behavior results from a change in the functional form of failure with current density as j→jc. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution
Keywords :
Monte Carlo methods; electromigration; integrated circuit interconnections; integrated circuit reliability; Monte-Carlo simulation; critical current density; current density; electromigration failure distributions; extrapolation methodology; failure time dispersion; lognormal distributions; median time to fail; reliability estimate; submicron contacts; vias; Contact resistance; Critical current density; Current density; Electromigration; Extrapolation; Geometry; H infinity control; Inorganic materials; Joining processes; Predictive models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
Type :
conf
DOI :
10.1109/IITC.2000.854327
Filename :
854327
Link To Document :
بازگشت