• DocumentCode
    2193296
  • Title

    Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: a new extrapolation methodology for reliability estimate

  • Author

    Huang, J.S. ; Oates, A.S.

  • Author_Institution
    Lucent Technol. Bell Labs., Orlando, FL, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    208
  • Lastpage
    210
  • Abstract
    We have studied the electromigration failure distributions as a function of current density, and we show experimentally that the forms deviate from lognormal distributions as j approaches critical current density. The form change in failure distributions can be well described by Monte-Carlo simulation based on our physical electromigration failure model. The model predicts that median time to fail (MTF) and failure time dispersion (σ) approach infinity as j→jc, and we show that this behavior results from a change in the functional form of failure with current density as j→jc. We propose a new methodology for the extrapolation of contact and via electromigration data to account for the change in the form of the failure distribution
  • Keywords
    Monte Carlo methods; electromigration; integrated circuit interconnections; integrated circuit reliability; Monte-Carlo simulation; critical current density; current density; electromigration failure distributions; extrapolation methodology; failure time dispersion; lognormal distributions; median time to fail; reliability estimate; submicron contacts; vias; Contact resistance; Critical current density; Current density; Electromigration; Extrapolation; Geometry; H infinity control; Inorganic materials; Joining processes; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854327
  • Filename
    854327