DocumentCode :
2193302
Title :
The effect of electron beam irradiation on insulating characteristics of molding compound for power semiconductor modules
Author :
Hong, Nung-Pyo ; Lee, Yong-Woo ; Im, Pil-Gyu ; Cho, Don-Chan ; Hong, Jin-woong
Author_Institution :
Power Electron. Team, Samsung Electron. Ltd., Buchan, South Korea
fYear :
1996
fDate :
20-23 May 1996
Firstpage :
207
Lastpage :
210
Abstract :
The high temperature-low expansion type epoxy resin used for molding material of power semiconductor elements is irradiated with an electron beam. It is found that the insulating characteristics of the molding material varied with electron beam irradiation conditions. The insulating characteristics of the molding material, such as dielectric breakdown voltage and volume resistivity, are investigated as a function of electron beam dose. As a result, the specimen which is irradiated with 4 Mrad has exhibited a high breakdown voltage and volume resistivity
Keywords :
electric breakdown; electrical conductivity; electron beam effects; epoxy insulation; modules; power semiconductor devices; semiconductor device packaging; 4 Mrad; dielectric breakdown voltage; electron beam dose; electron beam irradiation; epoxy resin; insulating characteristics; molding compound; power semiconductor modules; volume resistivity; Breakdown voltage; Conductivity; Dielectric breakdown; Dielectric materials; Electron beams; Insulation; Packaging; Polymers; Semiconductor materials; Volume measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
ISSN :
1063-6854
Print_ISBN :
0-7803-3106-0
Type :
conf
DOI :
10.1109/ISPSD.1996.509482
Filename :
509482
Link To Document :
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