The effect of electron beam irradiation on insulating characteristics of molding compound for power semiconductor modules

Author

Hong, Nung-Pyo ; Lee, Yong-Woo ; Im, Pil-Gyu ; Cho, Don-Chan ; Hong, Jin-woong

Author_Institution

Power Electron. Team, Samsung Electron. Ltd., Buchan, South Korea

fYear

1996

fDate

20-23 May 1996

Firstpage

207

Lastpage

210

Abstract

The high temperature-low expansion type epoxy resin used for molding material of power semiconductor elements is irradiated with an electron beam. It is found that the insulating characteristics of the molding material varied with electron beam irradiation conditions. The insulating characteristics of the molding material, such as dielectric breakdown voltage and volume resistivity, are investigated as a function of electron beam dose. As a result, the specimen which is irradiated with 4 Mrad has exhibited a high breakdown voltage and volume resistivity

Keywords

electric breakdown; electrical conductivity; electron beam effects; epoxy insulation; modules; power semiconductor devices; semiconductor device packaging; 4 Mrad; dielectric breakdown voltage; electron beam dose; electron beam irradiation; epoxy resin; insulating characteristics; molding compound; power semiconductor modules; volume resistivity; Breakdown voltage; Conductivity; Dielectric breakdown; Dielectric materials; Electron beams; Insulation; Packaging; Polymers; Semiconductor materials; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509482

Filename

509482