Title :
A new small signal MESFET and HEMT model compatible with large signal modeling
Author :
Struble, W. ; Platzker, A. ; Nash, S. ; Pla, J.
Author_Institution :
Res. Div., Raytheon Co., Lexington, MA, USA
Abstract :
We present a new, fully symmetric, small signal device model for GaAs MESFETs and HEMTs. This model is compatible with large signal device models since it represents the small signal limit of a device´s nonlinear behavior at any given bias point. The model is fully symmetric due to the incorporation of two transcapacitances C/sub m1/ (in parallel with C/sub gs/) and C/sub m2/ (in parallel with C/sub dg/) and by replacing the traditional output conductance g/sub ds/ with a new voltage controlled current source G/sub m2/ with time delay T/sub 2/. Model fits of measured S parameter data to 50 GHz are shown where our new model accurately fits the data and traditional models fail.<>
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 50 GHz; GaAs; HEMTs; MESFETs; S parameter; fully symmetric model; nonlinear behavior; small signal device model; time delay; transcapacitances; voltage controlled current source; Delay effects; Gallium arsenide; HEMTs; MESFETs; Scattering parameters; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335275
