Integration of copper and fluorosilicate glass for 0.18 μm interconnections

Author

Barth, E.P. ; Ivers, T.H. ; McLaughlin, P.S. ; McDonald, A. ; Levine, E.N. ; Greco, S.E. ; Fitzsimmons, J. ; Melville, I. ; Spooner, T. ; DeWan, C. ; Chen, Xia ; Manger, D. ; Nye, H. ; McGahay, V. ; Biery, G.A. ; Goldblatt, R.D. ; Chen, T.C.

Author_Institution

Semicond. Res. & Dev. Center, IBM Microelectron., Hopewell Junction, NY, USA

fYear

2000

fDate

2000

Firstpage

219

Lastpage

221

Abstract

The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 μm technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high performance logic and SRAM devices. Reliability and yield is shown to be equivalent to a similar technology without FSG. Key considerations in the development of this technology are presented

Keywords

CMOS integrated circuits; copper; dielectric thin films; fluoride glasses; integrated circuit interconnections; 0.18 micron; BEOL integration; CMOS technology; SOI FEOL; SRAM device; dual damascene copper interconnection; fluorosilicate glass low-k dielectric film; interlevel dielectric; logic device; reliability; yield; CMOS technology; Chemical technology; Copper; Damascene integration; Dielectric constant; Dielectric measurements; Dielectrics and electrical insulation; Glass; Optical films; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854330

Filename

854330