Self-shielding: new high-voltage inter-connection technique for HVICs

Author

Fujihira, Tatsuhiko ; Yano, Yukio ; Obinata, Shigeyuki ; Kumagai, Naoki ; Sakurai, Kenya

Author_Institution

Fuji Electr. Co. Ltd., Matsumoto, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

231

Lastpage

234

Abstract

A new, cost-effective, high-voltage inter-connection technique for HVICs, named Self-Shielding, is proposed. To avoid the lowering of breakdown voltage of high-voltage devices affected by the electric potential of overlying interconnections, self-shielding technique utilizes only the native PN-junction structures of high-voltage devices themselves. No additional shielding structure is required even to realize a very high-voltage IC above 1000 V. Design concept and device structures are presented together with the experimental results on the operation of self-shielded 1200 V level-shifters

Keywords

electric breakdown; integrated circuit interconnections; isolation technology; power integrated circuits; shielding; 1000 V; 1200 V; HV interconnection technique; HVICs; breakdown voltage; high-voltage devices; self-shielding; Breakdown voltage; Costs; Electric potential; Insulated gate bipolar transistors; Insulation; Integrated circuit interconnections; Power supplies; Production facilities; Research and development; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509488

Filename

509488