DocumentCode
2193507
Title
Integration and reliability of copper magnesium alloys for multilevel interconnects
Author
Braeckelmann, Gregor ; Venkatraman, Ramnath ; Capasso, Cristiano ; Herrick, Matthew
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
2000
fDate
2000
Firstpage
236
Lastpage
238
Abstract
This paper discusses the deposition, integration, performance, and reliability of copper-magnesium alloys in interconnect structures for state of the art integrated circuits. A detailed discussion of process-related characteristics will be presented. Special emphasis is given here on the adhesion and diffusion properties of copper-magnesium. Furthermore, electrical performance of test structures using copper-magnesium and results from electromigration testing are being presented
Keywords
adhesion; copper alloys; diffusion; electromigration; integrated circuit interconnections; magnesium alloys; Cu-Mg; adhesion; copper-magnesium alloy; diffusion; electrical characteristics; electromigration; integrated circuit; multilevel interconnect; process integration; reliability; Adhesives; Annealing; Atomic force microscopy; Copper alloys; Electromigration; Integrated circuit interconnections; Magnesium; Rough surfaces; Substrates; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854335
Filename
854335
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