Title :
4 kV insulated gate controlled thyristor with low on-state voltage drop
Author :
Sakano, J. ; Kobayashi, Hideo ; Nagusu, M. ; Mori, M.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
A novel Insulated Gate Controlled Thyristor (IGCT) is described. The IGCT has a MOSFET that controls the thyristor current, and a thyristor with floating p-base for a low on-state voltage drop. The 4 kV IGCT is fabricated using optimized field limiting rings and field plates, and shows a very low on-state voltage drop of 4.4 V, while that of a 4 kV IGRT is 5.6 V. However, the maximum controllable current of the IGCT is lower than that of the IGBT. The low on-state voltage drop and a high maximum controllable current have been accomplished by optimizing the p-base structure
Keywords :
MOS-controlled thyristors; power semiconductor switches; 4 kV; 4.4 V; IGCT; field limiting rings; field plates; floating p-base; insulated gate controlled thyristor; maximum controllable current; on-state voltage drop; thyristor current; Bipolar transistors; Cathodes; Electrodes; Equivalent circuits; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFET circuits; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509493
